BC849CLT1G 数据手册
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技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: onsemi BC849CLT1G
- Transistor Type: NPN
- Operating Temperature: -55°C~+150°C@(Tj)
- Collector Current (Ic): 100mA
- Power Dissipation (Pd): 300mW
- Transition Frequency (fT): 100MHz
- DC Current Gain (hFE@Ic,Vce): 420@2mA,5V
- Collector Cut-Off Current (Icbo): 15nA
- Collector-Emitter Breakdown Voltage (Vceo): 30V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 600mV@5mA,100mA
- Package: SOT-23-3
- Manufacturer: onsemi
- Series: -
- Packaging: Tape & Reel (TR)
- Part Status: Obsolete
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
- Power - Max: 300mW
- Frequency - Transition: 100MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
- Base Part Number: BC849
- detail: Bipolar (BJT) Transistor NPN 30V 100mA 100MHz 300mW Surface Mount SOT-23-3 (TO-236)